| PART |
Description |
Maker |
| K3N9VU1000A-YC |
128M-Bit (16Mx8 /8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3P9VU1000A-YC |
128M-Bit (16Mx8 /8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3P9VU4000A-GC |
128M-Bit (8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| E28F128J3A150 |
IC,EEPROM,NOR FLASH,8MX16/16MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
| UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
|
NEC, Corp.
NEC Corp.
|
| MX25L12805D MX25L12805DMI-20G |
128M-BIT [x 1] CMOS SERIAL FLASH
|
Macronix International
|
| MX25L12845EZNI10G MX25L12845E14 MX25L12845EMI10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
| HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM
8M X 16 DDR DRAM, 0.6 ns, PDSO66
8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| Z84C00 Z8400 Z0840008VEC Z0840006VEC |
NMOS/CMOS Z80 CPU CENTRAL PROCESSING UNIT
MEMORY, SDRAM, DDR, 128MB, 8MX16, TSOP-66
Microprocessor
|
Zilog.
|
